Scientists discover way to 'grow' sub-nanometer sized transistors

A research team led by Director JO Moon-Ho of the Center for Van der Waals Quantum Solids within the Institute for Basic Science (IBS) has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D semiconductor logic circuits. Notably, they used the 1D metals as a gate electrode of the ultra-miniaturized transistor. Integrated devices based on two-dimensional (2D) semiconductors, which exhibit excellent properties even at the ultimate limit…

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