Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have found a method to quantify the distribution of compositional fluctuations in the indium gallium nitride (InGaN) quantum wells at different indium concentrations. InGaN light emitting diodes (LEDs) have revolutionized the field of solid-state lighting due to their high efficiencies and durability, and low costs. The color of the LED emission can be changed by varying the…
