High levels of radiation, such as those occurring naturally in space and at high altitudes on Earth, can wreak havoc on electronics. MIT’s Lincoln Laboratory has developed a unique process for making integrated circuits resistant to damage and malfunction caused by extreme radiation levels. This fabrication capability — the 90-nanometer fully depleted silicon-on-insulator (FDSOI) complementary metal-oxide-semiconductor (CMOS) process — is now being transferred to microchip manufacturer SkyWater Technology, which will use it to produce radiation-hardened, or rad-hard, electronics. “Our 90-nanometer FDSOI CMOS process has matured and scaled, and it has…
